Infineon Expands CoolGaN Family with Compact Bidirectional Switches for Mobile Devices

What happened: Infineon released two devices in its CoolGaN BDS 40V G3 bidirectional switch family: IGK048B041S and IGK120B041S. The products reduce PCB footprint by up to 82 percent and cut component count in half. Each device integrates the function of two back-to-back silicon MOSFETs into a single component.

Why it matters: The devices come in WLCSP chip-scale packages measuring 2.1 x 2.1 mm² and 1.7 x 1.2 mm². The larger device achieves 4.2 mΩ RDD(on) while the smaller delivers 9 mΩ RDD(on). Gate charge is 40 percent lower than competing devices, enabling faster switching and reduced losses.

Industry context: The products target smartphones, notebooks, and wearables where spatial constraints limit design options. Infineon announced over 40 new GaN products in the past year. The company is implementing scalable GaN manufacturing on 300-millimeter wafers with first samples shipped to customers.

Our take: Device form factor is  constantly getting more compact and its expected to pack more power and higher performance. In that regard integrating  dual MOSFET functionality into single components simplifies PCB layouts.